Polishing of Silicon Carbide - SiC

The surface finish which is ultimately obtainable by polishing depends on the manufacturing process of the silicon carbide. The type of manufacturing process determines its density, grain size and hardness. Silicon carbide is available as solid CVD (Chemical Vapor Deposition), pressed, and single crystal.

Note: For best pricing, choose loosest acceptable tolerances.

Silicon carbide manufactured by CVD process can be polished to a finish of a few Angstroms.
Reaction bonded silicon carbide can be polished to 20 - 50 Angstrom finish only.
Hot pressed silicon carbide is polishable to 50 - 100 Angstrom level.
Sintered silicon carbide polishes to 100 Angstroms and often much higher, depending on material quality.

SiC Type	Density	Therm. Cond. W/mK	CTE x 10 ^-6
			20°C	1000°C
CVD	3.21	300	2.2	4.0
Reaction bonded	2.4 - 3.7	50 - 170	2.2 - 2.5	4.0 - 6.8
Hot pressed	3.1 - 3.3	50 - 160	2.3 - 2.5	4.3 - 4.5
Sintered	3.0 - 3.2	40 - 150	1.0 - 1.5	4.5 - 5.2

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